Reading and writing operations of memory device in micro-electromechanical resonator
نویسندگان
چکیده
منابع مشابه
Reading and writing operations of memory device in micro-electromechanical resonator
Micro-electromechanical resonators substantially exhibit bistable and hysteretic response when nonlinear characteristics appear. Badzey et al. reported that the nonlinear micro-electromechanical resonators can be used as a mechanical 1 bit memory. Based on their results, the authors propose reading and writing operations of the memory device. The reading and writing operations imply a displacem...
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این مطالعه به دو روش کمی و کیفی و با هدف بررسی استراتژی های فراشناختی فراگیران زبان انگلیسی به عنوان زبان خارجی در دو آزمون نوشتن و نوشتن ترکیبی انجام پذیرفت. در بخش کمی برای سنجش میزان استراتژی های فراشناختی از یک پرسشنامه که بر اساس مدل بکمن و پالمر (1996) ساخته شده بود استفاده شد. پایایی و روایی سازه ی پرسشنامه هنگام مطالعه ی پایلوت و روایی محتوای آن با جمع آوری نظرات نُه متخصص در رشته سنجیده...
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2012
ISSN: 1349-2543
DOI: 10.1587/elex.9.1230